2
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS031NR1 AFT09MS031GNR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +40
Vdc
Gate--Source Voltage
VGS
--6.0, +12
Vdc
Operating Voltage
VDD
17, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature Range
TC
--40 to +150
°C
Operating Junction Temperature Range
(1,2)
TJ
--40 to +225
°C
Total Device Dissipation @ TC
=25°C
Derate above 25°C
PD
317
1.59
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 31 W CW, 13.6 Vdc, IDQ
= 500 mA, 870 MHz
RθJC
0.63
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2, passes 2500 V
Machine Model (per EIA/JESD22--A115)
A, passes 100 V
Charge Device Model (per JESD22--C101)
IV, passes 1200 V
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
°C
Table 5. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
=40Vdc,VGS
=0Vdc)
IDSS
?
?
2
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 13.6 Vdc, VGS
=0Vdc)
IDSS
?
?
1
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
600
nAdc
On Characteristics
Gate Threshold Voltage
(VDS
=10Vdc,ID
=115μAdc)
VGS(th)
1.6
2.1
2.6
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=1.2Adc)
VDS(on)
?
0.1
?
Vdc
Forward Transconductance
(VGS
=10Vdc,ID
=10Adc)
gfs
?
7.8
?
S
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
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